FREQUENCY SCALING OF IMPATT DIODES

被引：4

作者：

BLUM, FA

KRAMER, NB

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 11期

关键词：

D O I：

10.1109/T-ED.1970.17111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：983 / +

页数：1

共 17 条

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BOWMAN, LS ;

BURRUS, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) :411-+

[2] MILLIMETER-WAVE OSCILLATIONS FROM AVALANCHING P-N JUNCTIONS IN SILICON [J].

BURRUS, CA .

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[3]

DELOACH BC, 1967, ADVANCES MICROWAVES, V2, P44

[4] SMALL-SIGNAL IMPEDANCE OF AVALANCHING JUNCTIONS WITH UNEQUAL ELECTRON AND HOLE IONIZATION RATES AND DRIFT VELOCITIES [J].

FISHER, ST .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (06) :313-+

[5] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].

GILDEN, M ;

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&

[6]

GRAY PE, 1964, PHYSICAL ELECTRONICS, P20

[7] AVALANCHE REGION OF IMPATT DIODES [J].

GUMMEL, HK ;

SCHARFETTER, DL .

BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (10) :1797-+

[8] A SMALL-SIGNAL THEORY OF AVALANCHE NOISE IN IMPATT DIODES [J].

GUMMEL, HK ;

BLUE, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :569-&

[9]

JOHNSON EO, 1965, RCA REV, V26, P163

[10] SMALL-SIGNAL ANALYSIS OF READ AVALANCHE DIODE [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (03) :141-+

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