SI EJECTION AND REGROWTH DURING THE INITIAL-STAGES OF SI(001) OXIDATION

被引：77

作者：

CAHILL, DG ^{[1
]}

AVOURIS, P ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, DIV RES, YORKTOWN HTS, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.106667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial stages of oxidation of the Si(001)-2 x 1 surface have been studied using scanning tunneling microscopy and spectroscopy. Among the new sites generated by the exposure of this surface to O2 are 1.4 angstrom high bumps on top of the surface. Upon annealing the O2-exposed surface, or upon O2 exposure at an elevated temperature, these bumps form highly anisotropic islands. Evidence is presented that these bumps and islands are made up of silicon ejected from the surface by the oxidation reaction.

引用

页码：326 / 328

页数：3

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