DIAMOND THIN-FILM RECESSED GATE FIELD-EFFECT TRANSISTORS FABRICATED BY ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING

被引：39

作者：

GROT, SA

GILDENBLAT, GS

BADZIAN, AR

机构：

[1] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIV PK,PA 16802

[2] PENN STATE UNIV,MAT RES LAB,UNIV PK,PA 16802

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.192795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350-degrees-C. The upper temperature range is limited by the gate leakage current The room-temperature hole concentration and mobility of the diamond film active layer were 1.2 X 10(13) cm-3 and 280 cm2 / V . s, respectively. The maximum transconductance was 87-mu-S / mm at 200-degrees-C.

引用

页码：462 / 464

页数：3

共 14 条

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[10]

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