SIC BIPOLAR-DEVICES

This paper presents some parameter calculations and experimental data relating to basic bipolar devices of SiC, namely diodes, transistors and dynistors. Some of the results were reported in an earlier publication. It has been shown theoretically that the basic parameters of SiC junction devices might be higher by an order of magnitude or more than those of analogous silicon-based devices. Also given in the paper are the current-voltage characteristics and other properties and parameters of SiC bipolar devices. The p-n junction operating current density was 1000 A cm-2 and the operating temperature reached 700-1000-degrees-C. The same breakdown voltage as in silicon p-n junctions could be achieved, but with a smaller thickness of the base region and with a concentration of the main impurity higher by an order of magnitude than in silicon devices. The switching speed of SiC devices is of the order of 10(-8) to 10(-9) s. The calculation results and experimental data showed fair agreement thus substantiating the theoretical assumptions made. It may also be asserted that SiC could be used for producing all types and modifications of bipolar devices. Finally, a possibility is considered of improving the performance of SiC bipolar devices by developing heterostructures based on SiC.