THIN-FILMS OF HIGH-RESISTIVITY ZINC-OXIDE PRODUCED BY A MODIFIED CVD METHOD

Highly resistive and highly textured pure and copper doped thin films were deposited on (100) silicon coated with SiO2, gold or platinum. The films were obtained using a process based on the pyrolysis on a heated substrate of an aerosol produced by ultra-high frequency spraying of a solution. The influence of deposition parameters, doping with copper, annealing in oxygen and substrate nature were studied. Auger spectroscopy reveals the presence of carbon which is removed by annealing. Electron spectroscopy for chemical analysis reveals two valency states for the copper in the structure ( +1 and +2). A ZnO film, deposited at 480-degrees, doped with 1.9% copper and annealed for 10 h at 700-degrees-C, exhibits a resistivity as high as 5.6 x 10(12) OMEGA-cm.