HOMOGENEOUS LITHIUM-FLUORIDE FILMS AS A HIGH-RESOLUTION ELECTRON-BEAM RESIST

被引:9
作者
LANGHEINRICH, W
VESCAN, A
SPANGENBERG, B
BENEKING, H
机构
[1] Institute of Semiconductor Electronics Aachen Technical University
关键词
D O I
10.1016/0167-9317(92)90058-Y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As a new high resolution electron beam resist, homogeneous and fine-crystalline lithium fluoride films were fabricated. For this purpose, a special evaporation process was developed. The advantage of lithium fluoride is the relatively low critical exposure dose, compared with other metal halides. The exposure characteristics of this resist have been studied and the high resolution capability in the range below 10nm is demonstrated. The critical exposure dose for a single line is between 200 and 800nC/cm, depending on film thickness and substrate. The properties of these films in standard RIE-processes were investigated and pattern transfer into SiO2 was performed. © 1992.
引用
收藏
页码:287 / 290
页数:4
相关论文
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