A 16 KBIT ELECTRICALLY ERASABLE PROM USING N-CHANNEL SI-GATE MNOS TECHNOLOGY

被引：9

作者：

HAGIWARA, T

YATSUDA, Y

KONDO, R

MINAMI, SI

AOTO, T

ITOH, Y

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 03期

关键词：

D O I：

10.1109/JSSC.1980.1051397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：346 / 353

页数：8

共 13 条

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[8] 8192-BIT ELECTRICALLY ALTERABLE ROM EMPLOYING A ONE-TRANSISTOR CELL WITH FLOATING GATE [J].

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