ANISOTROPIC PHYSICAL-PROPERTIES OF THE KONDO SEMICONDUCTOR CERHSB

被引：51

作者：

TAKABATAKE, T

TANAKA, H

BANDO, Y

FUJII, H

NISHIGORI, S

SUZUKI, T

FUJITA, T

KIDO, G

机构：

[1] HIROSHIMA UNIV,FAC SCI,HIROSHIMA 724,JAPAN

[2] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.50.623

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements of resistivity rho, thermopower S, and magnetic susceptibility X are reported on single-crystal CeRhSb. Only along the orthorhombic a axis, chi(T) exhibits a pronounced peak at 13 K and rho(T) has a shoulder at around 20 K. These anomalies and the relations rho(c) > rho(b) > rho(a) and chi(a) > chi(b) > chi(c) resemble those in the isostructural Kondo semiconductor CeNiSn. However, the anisotropy in rho(T), chi(T), and S(T) is still weaker than that in CeNiSn. The magnetic contribution to the specific heat divided by temperature C(m)/T reveals a maximum of 0.1 J/K2 mol near 10 K and decreases linearly with decreasing temperature. These results indicate that the gap formation in CeRhSb and CeNiSn originates from a similar type of hybridization of 4f states with a conduction state.

引用

页码：623 / 626

页数：4

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