CONTACT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS

被引：20

作者：

HIROSE, M

ALTAF, N

ARIZUMI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 03期

关键词：

D O I：

10.1143/JJAP.9.260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：260 / +

页数：1

共 24 条

[1]

ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[2] TRANSPORT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS [J].

ARIZUMI, T ;

HIROSE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (06) :749-+

[3] EFFECT OF THE TYPE OF SUPPORT ON THE PHOTOELECTRIC WORK FUNCTION OF SILVER FILMS [J].

BLACKMER, LL ;

FARNSWORTH, HE .

PHYSICAL REVIEW, 1950, 77 (06) :826-829

[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[5]

CROWELL CR, 1965, T METALL SOC AIME, V233, P478

[6] ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].

CROWELL, CR ;

HOWARTH, LE ;

SPITZER, WG ;

LABATE, EE .

PHYSICAL REVIEW, 1962, 127 (06) :2006-&

[7] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].

CROWELL, CR ;

SHORE, HB ;

LABATE, EE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&

[8] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[9] ELECTROCHEMICALLY DEPOSITED SCHOTTKY CONTACTS ON GAAS [J].

DORBECK, FH .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1135-&

[10] Photoelectric effect of aluminum films evaporated in vacuum [J].

Gaviola, E ;

Strong, J .

PHYSICAL REVIEW, 1936, 49 (06) :0441-0443

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