COMPARISON OF THE RESPONSIVITY OF W-NI POINT CONTACT MBM DIODES WITH W-SI POINT CONTACT SCHOTTKY DIODES

被引：4

作者：

YASUOKA, Y ^{[1
]}

SAKURADA, T ^{[1
]}

MIYATA, T ^{[1
]}

GUSTAFSON, TK ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 12期

关键词：

D O I：

10.1109/JQE.1980.1070429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1372 / 1375

页数：4

共 19 条

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[7] EXTENSION OF SCHOTTKY-BARRIER DETECTOR TO 70 MUM (4.3 THZ) USING SUBMICRON-DIMENSIONAL CONTACTS [J].

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APPLIED PHYSICS LETTERS, 1977, 30 (01) :5-7

[8] EXTENSION OF ABSOLUTE FREQUENCY MEASUREMENTS TO 148 THZ - FREQUENCIES OF 2.0-MUM AND 3.5-MUM XE LASER [J].

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[10] CHARACTERISTICS OF TUNGSTEN-NICKEL POINT CONTACT DIODES USED AS LASER HARMONIC-GENERATOR MIXERS [J].

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