DIRECT SYNTHESIS AND CRYSTALLIZATION OF GASB

被引：25

作者：

HARSY, M

GOROG, T

LENDVAY, E

KOLTAI, F

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 53卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90070-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：234 / 238

页数：5

共 18 条

[1] GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD [J].

BENZ, KW ;

MULLER, G .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (01) :35-42

[2] SOME COMMENTS ON INTERPRETATION OF KIKUCHI-LIKE REFLECTION PATTERNS OBSERVED BY SCANNING ELEECTRON MICROSCOPY [J].

BOOKER, GR ;

SHAW, AMB ;

WHELAN, MJ ;

HIRSCH, PB .

PHILOSOPHICAL MAGAZINE, 1967, 16 (144) :1185-&

[3] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[4] KIKUCHI-LIKE REFLECTION PATTERNS OBTAINED WITH SCANNING ELECTRON MICROSCOPE [J].

COATES, DG .

PHILOSOPHICAL MAGAZINE, 1967, 16 (144) :1179-&

[5]

DASEVSKIJ MA, 1969, SOVIET INORG MATER, V5, P1141

[6]

Dolginov L. M., 1978, Soviet Journal of Quantum Electronics, V8, DOI 10.1070/QE1978v008n03ABEH010046

[7]

DRAKING AE, 1979, P INT C RECON 79 PRA

[8] EFFECT OF THE POLARITY OF THE III-V INTERMETALLIC COMPOUNDS ON ETCHING [J].

FAUST, JW ;

SAGAR, A .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :331-333

[9] SYNTHESIS AND GROWTH OF ZNS ZNSE ZNTE GAS GA2SE3 AND INS CRYSTALS IN GA AND IN MELTS [J].

HARSY, M .

MATERIALS RESEARCH BULLETIN, 1968, 3 (06) :483-&

[10]

HARSY M, 1968, KRISTALL TECH, V3, pK95

← 1 2 →