X-RAY SPECULAR-REFLECTIVITY STUDY OF THE LIQUID-VAPOR DENSITY PROFILE OF HE-4

被引:42
作者
LURIO, LB
RABEDEAU, TA
PERSHAN, PS
SILVERA, IF
DEUTSCH, M
KOSOWSKY, SD
OCKO, BM
机构
[1] HARVARD UNIV, DEPT PHYS, CAMBRIDGE, MA 02138 USA
[2] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA
[3] BAR ILAN UNIV, DEPT PHYS, IL-52100 RAMAT GAN, ISRAEL
[4] BROOKHAVEN NATL LAB, DEPT PHYS, UPTON, NY 11973 USA
关键词
D O I
10.1103/PhysRevB.48.9644
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The helium liquid-vapor interfacial density profile has been measured with x-ray specular reflectivity. Measurements were performed on thick films of helium adsorbed onto atomically flat silicon substrates. Both the amplitude and the phase of the complex scattering amplitude of the helium-vapor interface were obtained from measured interference between reflections from the helium liquid-vapor interface and the silicon-helium interface. Films whose thickness varied from 15 angstrom to 220 angstrom over a range of temperatures from 1.1 K to 3.0 K were studied. At T = 1.13 K the film thickness is 215 angstrom and the interfacial width is 9.2+/-1 angstrom. No significant variation was seen in the interfacial widths measured at temperatures between 1.1 K and 1.8 K. Analysis of these measurements indicates that the interface is asymmetric, with the decay of the density into the vapor having the sharper falloff. The zero-K interfacial width extrapolated from the finite-temperature measurements with a quantized capillary-wave theory is 7.6(-2)+1 angstrom.
引用
收藏
页码:9644 / 9659
页数:16
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