SUPPRESSION OF SIDE LOBES IN THE FAR FIELD OF ALGAAS DH STRIPE LASERS BY A TE FACET COATING

被引:3
作者
KERPS, D
机构
[1] Hewlett-Packard Laboratories, Solid State Laboratory, Palo Alto
关键词
D O I
10.1063/1.91155
中图分类号
O59 [应用物理学];
学科分类号
摘要
Side lobes observed in the far-field distribution parallel to the junction plane of DH AlGaAs stripe-geometry lasers can be suppressed by a self-aligned facet masking process. A hole, burnt into a Te coating by the laser emission, allows only the main lobe emission to pass. The result supports the attribution of side lobes to refraction tails in the near field typical of a negative refractive index step wave guide as discussed in a previous paper [see R. W. Engelmann, D. Kerps, and F. Nunes, IEEE Quantum Electron. (to be published)].
引用
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页码:372 / 373
页数:2
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