REMARKABLE EFFECTS OF UNIAXIAL-STRESS ON STIMULATED FAR IR EMISSION FROM HOT HOLES IN GERMANIUM IN CROSSED ELECTRIC AND MAGNETIC-FIELDS

被引：5

作者：

GAVRILENKO, VI

NIKONOROV, VV

机构：

[1] Institute of Applied Physics of the USSR Academy of Sciences, Gorky, 603600

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1991年 / 23卷

关键词：

D O I：

10.1007/BF00619768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stimulated far IR emission due to l-h as well as cyclotron transitions of hot holes in uniaxially stressed p-Ge (P parallel-to H perpendicular-to E) was studied. The results obtained showed the significance of intersub-band hole tunnelling for these mechanisms of generation and may be explained by a change in tunnelling produced by the stress. A considerable expansion of the stimulated light hole cyclotron emission band was observed in a stressed crystal. This expansion allows covering (in one sample) of all generation bands in the light hole cyclotron resonance (CR) masers in unstressed p-Ge, reported so far.

引用

页码：S217 / S220

页数：4

共 8 条

[1]

ALTUKHOV IV, 1988, JETP LETT+, V47, P136

[2] NEGATIVE MASS CYCLOTRON-RESONANCE MASER [J].