EFFECTS OF EXCHANGE-CORRELATION AND SURFACE STRAIN ON THE SUBBAND SEPARATIONS IN SI(111) SURFACE INVERSION-LAYERS

被引：9

作者：

YI, KS

QUINN, JJ

机构：

来源：

SURFACE SCIENCE | 1982年 / 113卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90562-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：50 / 54

页数：5

共 8 条

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[2]

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[3] A SIMPLIFIED TREATMENT OF EXCHANGE AND CORRELATION IN SEMICONDUCTING SURFACE INVERSION-LAYERS [J].

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KAWAMOTO, G ;

QUINN, JJ ;

YING, SC .

SOLID STATE COMMUNICATIONS, 1980, 34 (06) :423-426

[4] ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

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[5]

MCCOMBE BD, 1980, J PHYS SOC JAPAN SA, V49, P959

[6] OBSERVATION OF SIXFOLD VALLEY DEGENERACY IN ELECTRON INVERSION LAYERS ON SI(111) [J].

TSUI, DC ;

KAMINSKY, G .

PHYSICAL REVIEW LETTERS, 1979, 42 (09) :595-597

[7]

TSUI DC, 1976, SOLID STATE COMMUN, V20, P93, DOI 10.1016/0038-1098(76)91707-5

[8] RESOLUTION OF SHUBNIKOV-DE HAAS PARADOXES IN SI INVERSION-LAYERS [J].

VINTER, B ;

OVERHAUSER, AW .

PHYSICAL REVIEW LETTERS, 1980, 44 (01) :47-50

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