RAMAN-SPECTRA OF SI-IMPLANTED SILICON ON SAPPHIRE

被引：13

作者：

OHMURA, Y

INOUE, T

YOSHII, T

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 07期

关键词：

D O I：

10.1016/0038-1098(81)90139-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：583 / 585

页数：3

共 12 条

[1] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ ;

CORBOY, JF ;

CULLEN, GW .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :275-277

[2] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].

ANASTASSAKIS, E ;

PINCZUK, A ;

BURSTEIN, E ;

POLLAK, FH ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+

[3]

Crowder B., 1971, ION IMPLANTATION SEM, P255

[4]

EERNISSE EP, 1971, ION IMPLANTATION SEM, P17

[5] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].

ENGLERT, T ;

ABSTREITER, G ;

PONTCHARRA, J .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33

[6]

HYNECEK J, 1974, J APPL PHYS, V45, P2631, DOI 10.1063/1.1663642

[7] CRYSTALLINE DISORDER REDUCTION AND DEFECT-TYPE CHANGE IN SILICON ON SAPPHIRE FILMS BY SILICON IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING [J].

INOUE, T ;

YOSHII, T .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :64-66

[8] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES [J].

LAU, SS ;

MATTESON, S ;

MAYER, JW ;

REVESZ, P ;

GYULAI, J ;

ROTH, J ;

SIGMON, TW ;

CASS, T .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :76-78

[9] MAGNETORESISTANCE ANISOTROPIES IN N-TYPE (001) SI ON SAPPHIRE [J].

OHMURA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 39 (02) :549-550

[10] GALVANOMAGNETIC EFFECT FOR HOLES AND THE VALENCE BAND IN (001) SILICON ON SAPPHIRE [J].

OHMURA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (01) :145-152

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