INVESTIGATION OF THE APPLICATION OF POROUS SILICON LAYERS TO THE DIELECTRIC ISOLATION OF INTEGRATED-CIRCUITS

被引：7

作者：

TENG, TC

机构：

[1] Signetics Corporation, Sunnyvale

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 05期

关键词：

dielectric isolation; porous silicon film; silicon anodization; silicon dioxide dielectric film;

D O I：

10.1149/1.2129158

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

There seem to be great advantages awaiting the integrated circuit industry through the improvement in dielectric isolation techniques. By the use of oversized base and emitter masks, higher packing density can be achieved. Additionally, junction capacitance can be lowered which reduces transient time and, thus, increases device speed. Improved dielectric isolation also allows the use of higher operating voltages with a resultant increase in higher isolation breakdown voltage. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：870 / 874

页数：5