VALENCE AND CORE LEVEL PHOTOEMISSION SPECTRA OF ALXGA1-XAS

被引:36
作者
LUDEKE, R [1 ]
LEY, L [1 ]
PLOOG, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1016/0038-1098(78)90327-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
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页码:57 / 60
页数:4
相关论文
共 18 条
[1]   RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].
ABSTREITER, G ;
BAUSER, E ;
FISCHER, A ;
PLOOG, K .
APPLIED PHYSICS, 1978, 16 (04) :345-352
[2]   ENERGY-BAND STRUCTURE OF ALXGA1-XAS [J].
BALDERESCHI, A ;
HESS, E ;
MASCHKE, K ;
NEUMANN, H ;
SCHULZE, KR ;
UNGER, K .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23) :4709-4717
[3]  
BALDERESCHI A, COMMUNICATION
[4]   ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS [J].
BEROLO, O ;
WOOLLEY, JC .
CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) :1335-&
[5]  
BLACK J, 1966, J ELECTROCHEM SOC, V113, P240
[6]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[7]   PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL [J].
EASTMAN, DE ;
GROBMAN, WD ;
FREEOUF, JL ;
ERBUDAK, M .
PHYSICAL REVIEW B, 1974, 9 (08) :3473-3488
[8]   BOND-ORBITAL MODEL .2. [J].
HARRISON, WA ;
CIRACI, S .
PHYSICAL REVIEW B, 1974, 10 (04) :1516-1527
[9]  
HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]
[10]  
Klug H.-P., 1975, Experimentelle Technik der Physik, V23, P605