ANALYSIS OF RHEED DATA FROM THE GAAS(001)2X4 SURFACE

被引:38
作者
MCCOY, JM [1 ]
KORTE, U [1 ]
MAKSYM, PA [1 ]
MEYEREHMSEN, G [1 ]
机构
[1] UNIV OSNABRUCK,FACHBEREICH PHYS,W-4500 OSNABRUCK,GERMANY
关键词
D O I
10.1016/0039-6028(92)90215-R
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Dynamical calculations of sets of clastic RHEED rocking curves from the (2 x 4)-reconstructed GaAs(001) surface, using 12.5 keV electrons incident in the (110BAR) azimuth, are presented. Comparison of theoretical curves with experimental data permits an estimate of the values of the parameters present in the assumed surface model. The reliability of the parameters obtained is discussed with reference to factors possibly limiting the closeness of fit attainable between theory and experiment, notably inconsistencies in the experimental data and the neglect of the possible effects of surface disorder and defects on the theoretical rocking curves. Discrepancies present between theory and experiment mean that the values obtained for the surface model parameters should be regarded as only provisional. The effect upon rocking curves of varying the As surface coverage is then investigated. The experiment/theory comparison supports the 75% coverage of As observed using the STM, but a consideration of this RHEED data alone cannot exclude a 50% as coverage. Calculations employing unit cells containing surface defects suggest that such defects have very little effect upon sets of rocking curves. A consideration of the kinematic surface structure factor shows that surface disorder may markedly reduce the intensities of fractional-order diffraction features, yet have less effect upon whole-order features.
引用
收藏
页码:29 / 47
页数:19
相关论文
共 36 条
[1]  
BEEBY JL, 1988, REFLECTION HIGH ENER, P29
[2]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837
[3]  
CHAMBERS SA, 1991, SURF SCI, V248, pL274, DOI 10.1016/0039-6028(91)91171-S
[4]   SURFACE STOICHIOMETRY VARIATION ASSOCIATED WITH GAAS (001) RECONSTRUCTION TRANSITIONS [J].
DEPARIS, C ;
MASSIES, J .
JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) :157-172
[5]   RELATIVISTIC HARTREE-FOCK X-RAY AND ELECTRON SCATTERING FACTORS [J].
DOYLE, PA ;
TURNER, PS .
ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :390-&
[6]   MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES [J].
FARRELL, HH ;
HARBISON, JP ;
PETERSON, LD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1482-1489
[7]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY [J].
FARRELL, HH ;
PALMSTROM, CJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :903-907
[8]  
HERMAN MA, 1989, MOL BEAM EPITAXY
[9]   MANY-BEAM CALCULATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) INTENSITIES BY THE MULTI-SLICE METHOD [J].
ICHIMIYA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (01) :176-180
[10]   A RHEED ARPES CORE LEVEL SPECTROSCOPIC EVALUATION OF THE STRUCTURE OF MBE-GROWN GAAS(001)-2X4 SURFACES [J].
JOYCE, BA ;
NEAVE, JH ;
DOBSON, PJ ;
LARSEN, PK ;
ZHANG, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :562-562