NEUTRON GUIDANCE BY INTERNAL REFLECTIONS IN THIN SILICON-WAFERS

被引：5

作者：

GRUNING, U ^{[1
]}

MAGERL, A ^{[1
]}

MILDNER, DFR ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 314卷 / 01期

关键词：

D O I：

10.1016/0168-9002(92)90510-B

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have performed cold neutron longitudinal transmission measurements through single crystal silicon wafers of 200-mu-m thickness and 50 mm length which have been coated on both sides with nickel to form microguides. Rocking curve measurements with neutrons of a wavelength of 7 angstrom have been conducted on assemblies of straight wafers placed end-to-end for neutron pathways in silicon from 50 to 200 mm, and on curved wafers. In addition. transmission measurements have been carried out on a straight wafer as a function of wavelength. We find that the reflectivity for the internal silicon-nickel interface is 0.988 +/- 0.005.

引用

页码：171 / 177

页数：7

共 14 条

[1]

ALEFELD B, 1988, SPIE P, V983, P120

[2] THE MEASUREMENT OF BORON AT SILICON-WAFER SURFACES BY NEUTRON DEPTH PROFILING [J].