HIGH-CAPACITY LIQUID-PHASE EPITAXY APPARATUS UTILIZING THIN MELTS

被引：6

作者：

LORIMOR, OG ^{[1
]}

SAUL, RH ^{[1
]}

DAWSON, LR ^{[1
]}

PAOLA, CR ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 11期

关键词：

D O I：

10.1016/0038-1101(73)90085-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1289 / &

共 18 条

[1]

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[2]

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[3] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J].

HACKETT, WH ;

SAUL, RH ;

VERLEUR, HW ;

BASS, SJ .

APPLIED PHYSICS LETTERS, 1970, 16 (12) :477-&

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JORDAN, AS .

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[5] COPRECIPITATION OF GA2O3 IN LIQUID-PHASE EPITAXIAL GROWTH OF GAP [J].

KOWALCHIK, M ;

JORDAN, AS ;

READ, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :756-+

[6] A TECHNIQUE FOR DETERMINING P-N JUNCTION DOPING PROFILES AND ITS APPLICATION TO GAP [J].

MCGAHAN, TE ;

HACKETT, WH .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (08) :1182-&

[7]

Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0

[8] APPARATUS FOR MEASURING QUANTUM EFFICIENCY IN ELECTROLUMINESCENT DEVICES OVER A WIDE CURRENT RANGE [J].

RALSTON, JM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (06) :876-&

[9] SURFACE MORPHOLOGY OF LIQUID-PHASE EPITAXIAL LAYERS [J].

SAUL, RH ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :1983-1988

[10]

SAUL RH, 1972, J ELECTROCHEM SOC, V119, P542

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