MEASUREMENTS OF QUENCHED-IN RESISTIVITY IN THIN SINGLE-CRYSTAL TUNGSTEN WIRES

被引：7

作者：

KHOSHNEVISAN, M ^{[1
]}

STONE, EL ^{[1
]}

BASS, J ^{[1
]}

机构：

[1] MICHIGAN STATE UNIV, DEPT PHYS, E LANSING, MI 48824 USA

来源：

关键词：

D O I：

10.1080/14786439808206537

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：105 / 113

页数：9

共 9 条

[1] SIZE EFFECTS IN ELECTRON TRANSPORT IN METALS
BRANDLI, G
OLSEN, JL
[J]. MATERIALS SCIENCE AND ENGINEERING, 1969, 4 (2-3): : 61 - +
[2] HOT RESISTIVITY OF TUNGSTEN WIRES
DAVIS, GL
[J]. NATURE, 1962, 196 (4854) : 565 - &
[3] QUENCHING OF VACANCY DEFECTS INTO MOLYBDENUM
EVANS, JH
[J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (180): : 1261 - &
[4] A STUDY OF VACANCIES IN TUNGSTEN WIRES QUENCHED IN SUPERFLUID HELIUM
GRIPSHOV.RJ
KHOSHNEV.M
ZETTS, JS
BASS, J
[J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (178) : 757 - +
[5] Larson D.C., 1971, PHYS THIN FILMS, V6, P81
[6] PARK JY, 1973, DEFECTS DEFECT CLUST
[7] ROESER WF, 1941, TEMPERATURE ITS MEAS
[8] SCHULTZ H, 1965, LATTICE DEFECTS QUEN
[9] SCHULTZ H, 1973, DEFECTS DEFECT CLUST