THEORY OF DISORDER SCATTERING IN MIXED-CRYSTAL SYSTEMS

被引：2

作者：

HOLZHUTTER, HG ^{[1
]}

机构：

[1] HUMBOLDT UNIV,SEKT PHYS,DDR-104 BERLIN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 79卷 / 01期

关键词：

D O I：

10.1002/pssb.2220790145

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K13 / K15

页数：3

共 12 条

[1]

ANIMALU AOE, 1965, PHIL MAG, V12, P1248

[2]

BALDERESCHI A, 1974, SOLID STATE COMMUN, V16, P99

[3]

BROOKS H, 1956, ADV ELECTRONICS, V7, P156

[4]

CHATTOPADHYDY D, 1973, PHYS REV B, V12, P12

[5] DIELECTRIC SCREENING AND SELF-CONSISTENT CRYSTAL FIELDS [J].

COHEN, MH ;

PHILLIPS, JC .

PHYSICAL REVIEW, 1961, 124 (06) :1818-+

[6] ELECTRON MOBILITY OF INDIUM ARSENIDE PHOSPHIDE [IN(ASYP1-Y)] [J].

EHRENREICH, H .

[7] MAGNETORESISTANCE OF GERMANIUM-SILICON ALLOYS [J].

GLICKSMAN, M .

PHYSICAL REVIEW, 1955, 100 (04) :1146-1147

[8] MOBILITY OF ELECTRONS IN GERMANIUM-SILICON ALLOYS [J].

GLICKSMAN, M .

PHYSICAL REVIEW, 1958, 111 (01) :125-128

[9] NEW METHOD FOR ELECTRONIC STRUCTURE OF METALS [J].

HEINE, V ;

ABARENKOV, I .

PHILOSOPHICAL MAGAZINE, 1964, 9 (99) :451-&

[10]

Nordheim L, 1931, ANN PHYS-BERLIN, V9, P607