INFLUENCE OF THE DEFECT CONCENTRATION ON THE RECOMBINATION IN ELECTRON BOMBARDED A-SI-GE-H ALLOYS STUDIED BY PHOTOLUMINESCENCE AND ELECTRON-SPIN RESONANCE

被引：2

作者：

CARIUS, R ^{[1
]}

FINGER, F ^{[1
]}

机构：

[1] UNIV MARBURG, FACHBEREICH PHYS, W-3550 MARBURG, GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90646-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：549 / 551

页数：3

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