THERMODYNAMIC CALCULATION FOR VAPOR GROWTH OF INXGA1-XAS - IN-GA-AS-CL-H SYSTEM

被引：26

作者：

MINAGAWA, S

SEKI, H

EGUCHI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1972年 / 11卷 / 06期

关键词：

D O I：

10.1143/JJAP.11.855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：855 / &

共 14 条

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[3] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J].

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[4]

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FERGUSSON, RR ;

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[6]

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[7]

GOLDFINGER P, 1959, 1958 JOINT C MASS SP

[8] REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS [J].

KIRWAN, DJ .

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[9] PREPARATION AND PROPERTIES OF GAAS-INAS MIXED CRYSTALS [J].

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[10] THERMODYNAMICAL ANALYSIS FOR VAPOR GROWTH OF GAXIN1-XAS CRYSTALS [J].

NAGAI, H ;

SHIBATA, T ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) :1337-&

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