RAMAN-SCATTERING IN GAP/ALP SHORT-PERIOD SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：14

作者：

SONI, RK

ASAHI, H

EMURA, S

WATANABE, T

ASAMI, K

GONDA, S

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0169-4332(92)90474-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present Raman scattering characterization of short-period (GaP)n(AlP)m superlattices grown on GaAs (001) substrate by gas source MBE. Confined optical vibrations are observed in GaP and AlP layers which show strong sensitivity to the thickness. The measured confined frequencies are explained by considering an intermediate alloy layer in the interface plane due to short-range roughness. The influence of interface roughness on the behavior of confined vibrations is weak in thicker layer (n, m greater-than-or-equal-to 5) but strong and asymmetrical in thin layer (n, m = 3) superlattices.

引用

页码：553 / 558

页数：6

共 18 条

[1] GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SHORT-PERIOD GAP/ALP(001) SUPERLATTICES [J].