EXPERIMENTAL-EVIDENCE FOR THE SI-SI BOND MODEL OF THE 7.6-EV BAND IN SIO2 GLASS

被引：140

作者：

HOSONO, H

ABE, Y

IMAGAWA, H

IMAI, H

ARAI, K

机构：

[1] TOYO UNIV, DEPT APPL CHEM, KAWAGOE, SAITAMA 350, JAPAN

[2] ELECTROTECH LAB, SAKURA, IBARAKI 305, JAPAN

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 21期

关键词：

D O I：

10.1103/PhysRevB.44.12043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have found a decrease in the intensity of the 7.6-eV band and the appearance of the Si-H band upon heating SiO2 glasses, which were prepared by a method involving processes of dehydration with Cl2 gas, in H-2 gas. The absorption cross section of the 7.6-eV band evaluated from these changes is 7.5 x 10(-17) cm2, which is close to that of a band centered at 7.56 eV of the Si2H6 molecule containing a Si-Si bond. These results give experimental evidence for the Si-Si bond model of the 7.6-eV band in unirradiated SiO2 glass.

引用

页码：12043 / 12045

页数：3

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