MNOS MEMORY TRANSISTORS IN SIMPLE MEMORY ARRAYS

[1] AN INTEGRATED METAL-NITRIDE-OXIDE-SILICON (MNOS) MEMORY [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1190 - &

[2] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[3] LUNDKVIST L, TO BE PUBLISHED

[4] PROPERTIES OF MNOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &

[5] MEMORY BEHAVIOR OF AN MNS CAPACITOR [J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 260 - &

[6] ROSS EC, 1970, RCA REV, V31, P467

[7] CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT [J]. APPLIED PHYSICS LETTERS, 1969, 14 (02) : 45 - &

[8] THEORY OF THIN-OXIDE MNOS MEMORY TRANSISTOR [J]. ELECTRONICS LETTERS, 1970, 6 (20) : 645 - +

[9] SVENSSON C, TO BE PUBLISHED

[10] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2951 - +

[1] AN INTEGRATED METAL-NITRIDE-OXIDE-SILICON (MNOS) MEMORY [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1190 - &

[2] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[3] LUNDKVIST L, TO BE PUBLISHED

[4] PROPERTIES OF MNOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &

[5] MEMORY BEHAVIOR OF AN MNS CAPACITOR [J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 260 - &

[6] ROSS EC, 1970, RCA REV, V31, P467

[7] CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT [J]. APPLIED PHYSICS LETTERS, 1969, 14 (02) : 45 - &

[8] THEORY OF THIN-OXIDE MNOS MEMORY TRANSISTOR [J]. ELECTRONICS LETTERS, 1970, 6 (20) : 645 - +

[9] SVENSSON C, TO BE PUBLISHED

[10] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2951 - +