STUDY OF NI AS A BARRIER METAL IN AUSN SOLDERING APPLICATION FOR LASER CHIP/SUBMOUNT ASSEMBLY

被引:33
作者
LEE, CH
WONG, YM
DOHERTY, C
TAI, KL
LANE, E
BACON, DD
BAIOCCHI, F
KATZ, A
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.352279
中图分类号
O59 [应用物理学];
学科分类号
摘要
The possibility of replacing Pt in the Ti/Pt/Au base and traditionally used metallurgical structure by Ni, while bonding InP laser chip to a submount with AuSn (80% Au) solder, has been investigated. Various Ni-based metal alloys have been prepared by evaporation. Reflow experiments were conducted in a chamber under forming ps-controlled ambient. The Ti/Ni/AuSn system provided much longer surface local freezing duration compared to the Ti/Pt/AuSn system. Scanning electron microscopy analysis revealed a smoother surface morphology for the Ti/Ni/AuSn system after the metal refroze. Auger electron spectroscopy depth profiles indicated the formation of a Ni-Sn-Au interacted layer. The interaction took place in two steps: the first stage was the dissolution of Ni into the Au-Sn liquid followed by precipitation of a Ni-Sn-Au intermetallic compound; the second stage was a solid-state interdiffusion of Sn, Au, and Ni which occured in the interacted layer and in the original Ni layer. The latter step was a diffusion-controlled process, resulting in a very slow growth rate. Both Au and Sn reacted to form Ni alloy layers of almost equal thickness, regardless of the reaction duration (up to about 5 min). This intensive reaction, however, did not lead to full consumption of the Ti interfacial layer, which provided an excellent adhesion layer between the submount and the metallurgical structure.
引用
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页码:3808 / 3815
页数:8
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