ON-WAFER IMPEDANCE MEASUREMENT ON LOSSY SUBSTRATES

被引：9

作者：

WILLIAMS, DF

MARKS, RB

机构：

[1] National Institute of Standards and Technology, Boulder

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 06期

关键词：

D O I：

10.1109/75.294283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces a new method for measuring impedance parameters in transmission lines fabricated on lossy or dispersive dielectrics. The method, which uses an independent calibration to provide an impedance reference, compares well with conventional techniques when applied to lossless substrates. The effectiveness of the technique is illustrated for resistors fabricated on lossy silicon substrates.

引用

页码：175 / 176

页数：2

共 6 条

[1]

Marks R.B., Williams D.F., A general waveguide circuit theory, J. Res. Natl. Inst. Stand. Technol., 97, pp. 533-561, (1992)

[2]

Williams D.F., Marks R.B., Accurate transmission line characterization, IEEE Microwave and Guided Wave Lett., 3, pp. 247-249, (1993)

[3]

Walker D.K., Williams D.F., Morgan J.M., Planar resistors for probe stationcalibration, ARFTG, pp. 1-9, (1992)

[4]

Williams D.F., Marks R.B., Davidson A., Comparison of on-wafer calibrations, 38th ARFTG, pp. 68-81, (1991)

[5]

Marks R.B., Williams D.F., Characteristic impedance determination using propagation constant measurement, IEEE Microwave and Guided Wave Lett., 1, pp. 141-143, (1991)

[6]

Williams D.F., Marks R.B., Transmission line capacitance measurement, IEEE Microwave and Guided Wave Lett., 1, pp. 243-245, (1991)

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