LIMITS TO SOLID SOLUBILITY IN ION-IMPLANTED SILICON

被引：45

作者：

WILLIAMS, JS

ELLIMAN, RG

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

712 Electronic and Thermionic Materials;

D O I：

10.1016/0029-554X(81)90712-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：389 / 395

页数：7

共 23 条

[1] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].

BLOOD, P ;

BROWN, WL ;

MILLER, GL .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182

[2]

CHU WK, 1980, LASER ELECTRON BEAM, P361

[3] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J].

CULLIS, AG ;

SEIDEL, TE ;

MEEK, RL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5188-5198

[4]

HANSEN M, 1958, CONSTITUTION BINARY, P1106

[5]

Jackson K. A., 1980, LASER ELECTRON BEAM, P104

[6]

LAU SS, 1979, LASER SOLID INTERACT, P84

[7] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J].

LIETOILA, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :532-534

[8]

LIETOILA A, 1980, LASER ELECTRON BEAM, P350

[9]

Mayer J. W., 1970, ION IMPLANTATION SEM

[10]

POATE JM, 1980, ION IMPLANTATION

← 1 2 3 →