GROWTH OF 2 INCH GE - GA CRYSTALS BY THE DYNAMIC VERTICAL GRADIENT FREEZE PROCESS AND ITS NUMERICAL MODELING INCLUDING TRANSIENT SEGREGATION

被引：26

作者：

HOFMANN, D

JUNG, T

MULLER, G

机构：

[1] Kristallabor, Institut für Werkstoffwissenschaften, Universität Erlangen - Nürnberg, W-8520 Erlangen

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90321-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A process model of the dynamical vertical gradient freeze technique for heat transfer and segregation is introduced. Model predictions for favorable growth conditions are verified in a new specially designed multizone furnace by 2 inch Ge:Ga crystal growth experiments. The controlled establishment of a convex solid-liquid interface shape is demonstrated. Measured dopant distribution shows a good correlation with the results of the segregation model.

引用

页码：213 / 218

页数：6

共 24 条

[1] CONVECTION AND SEGREGATION IN DIRECTIONAL SOLIDIFICATION OF DILUTE AND NON-DILUTE BINARY-ALLOYS - EFFECTS OF AMPOULE AND FURNACE DESIGN [J].