HALL MOBILITY OF ELECTRONS AND HOLES IN MNO AT HIGH TEMPERATURE

被引:16
作者
GVISHI, M
TALLAN, NM
TANNHAUSER, DS
机构
关键词
D O I
10.1016/0038-1098(68)90018-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:135 / +
页数:1
相关论文
共 7 条
[1]   HIGH-TEMPERATURE ELECTRICAL PROPERTIES OF MANGANESE MONOXIDE [J].
HED, AZ ;
TANNHAUSER, DS .
JOURNAL OF CHEMICAL PHYSICS, 1967, 47 (06) :2090-+
[2]  
LUPU NZ, TO BE PUBLISHED
[3]   HALL EFFECT IN LI-DOPED MNO [J].
NAGELS, P ;
DENAYER, M .
SOLID STATE COMMUNICATIONS, 1967, 5 (03) :193-&
[4]  
TALLAN NM, TO BE PUBLISHED
[5]  
Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1
[6]   HALL EFFECT IN COO NIO AND ALPHA-FE2O3 [J].
VANDAAL, HJ ;
BOSMAN, AJ .
PHYSICAL REVIEW, 1967, 158 (03) :736-&
[7]  
ZIMAN JM, 1960, ELECTRONS PHONONS, P489