ON ELECTRICAL AND MAGNETORESISTANCE PROPERTIES OF CD3AS2-NIAS EUTECTIC

被引：3

作者：

ELLIOTT, CT

HISCOCKS, SE

机构：

[1] Department of Physics, Royal Radar Establishment, Great Malvern, Worcs

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1969年 / 2卷 / 08期

关键词：

D O I：

10.1088/0022-3727/2/8/304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of Hall effect, conductivity and magnetoresistance measurements on the eutectic Cd3As2-NiAs at temperatures from 4·2 to 300°K are reported. The potential of the system for magnetoresistive devices is assessed.

引用

页码：1083 / &

共 14 条

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