APPLICATION OF A HEAT PIPE TO CZOCHRALSKI GROWTH .1. GROWTH AND SEGREGATION BEHAVIOR OF GA-DOPED GE

The installation of a heat pipe in the hot zone of a Czochralski system permitted the virtual elimination of axial thermal asymmetry and associated with it the reduction of rotational and radial segregation inhomogeneities in Ga-doped Ge by close to an order of magnitude. In the absence of excessively transient growth conditions it was possible to apply steady-state segregation theory to crystals grown and establish the applicability of the Burton, Prim, and Slichter relationship to microsegregation associated with rotational crystal pulling. A comparative analysis showed that the thickness of the solute boundary layer (5) for rotational pulling computed on the basis of the modified Cochran relationship is identical to that obtained through the BPS relationship. © 1979, The Electrochemical Society, Inc. All rights reserved.