ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M

Room-temperature c.w. operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1·56 µm. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 mA for a 17 µm wide oxide-defined stripe laser. © 1979, The Institution of Electrical Engineers. All rights reserved.