ION DAMAGE TO SILICON-CRYSTALS INSIDE AN ELECTRON-MICROSCOPE

被引：3

作者：

URBAN, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 01期

关键词：

D O I：

10.1002/pssa.2210660124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：213 / 218

页数：6

共 19 条

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[2]

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[10] RADIATION-INDUCED DEFECTS IN SILICON AT ROOM-TEMPERATURE [J].

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