DIAMOND DEPOSITION BY ATMOSPHERIC-PRESSURE INDUCTION PLASMA - EFFECTS OF IMPINGING JET FLUID-MECHANICS ON FILM FORMATION

被引:12
作者
GIRSHICK, SL
YU, BW
LI, C
HAN, H
机构
[1] Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455
基金
美国国家科学基金会;
关键词
D O I
10.1016/0925-9635(93)90278-A
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of boundary layer thickness on diamond film formation in an atmospheric pressure plasma was investigated by adding argon to the methane-hydrogen reactant jet so as to increase the jet momentum. It was found that argon addition significantly increased the range of conditions over which well-faceted, continuous diamond film could be grown. A numerical model was developed to predict the two-dimensional temperature and flow fields in the reactor and the one-dimensional chemical kinetics in the substrate boundary layer. An interesting outcome of these calculations is that the largest effect of thinning the boundary layer by adding argon to the central jet is a significant enhancement in the flux of monatomic carbon vapor to the substrate, and the experimentally observed results can be correlated with the calculated carbon fluxes.
引用
收藏
页码:1090 / 1095
页数:6
相关论文
共 18 条
[1]   A MATHEMATICAL-MODEL OF THE FLUID-MECHANICS AND GAS-PHASE CHEMISTRY IN A ROTATING-DISK CHEMICAL VAPOR-DEPOSITION REACTOR [J].
COLTRIN, ME ;
KEE, RJ ;
EVANS, GH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) :819-829
[2]   DETAILED SURFACE AND GAS-PHASE CHEMICAL-KINETICS OF DIAMOND DEPOSITION [J].
FRENKLACH, M ;
WANG, H .
PHYSICAL REVIEW B, 1991, 43 (02) :1520-1545
[3]  
GIRSHICK SL, IN PRESS PLASMA CHEM
[4]   NUMERICAL MODELING OF THE FILAMENT-ASSISTED DIAMOND GROWTH ENVIRONMENT [J].
GOODWIN, DG ;
GAVILLET, GG .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6393-6400
[5]   SIMULATIONS OF HIGH-RATE DIAMOND SYNTHESIS - METHYL AS GROWTH SPECIES [J].
GOODWIN, DG .
APPLIED PHYSICS LETTERS, 1991, 59 (03) :277-279
[6]   GAS-PHASE KINETICS DURING DIAMOND GROWTH - CH4 AS-GROWTH SPECIES [J].
HARRIS, SJ .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) :3044-3048
[7]   MECHANISM FOR DIAMOND GROWTH FROM METHYL RADICALS [J].
HARRIS, SJ .
APPLIED PHYSICS LETTERS, 1990, 56 (23) :2298-2300
[8]   ENERGETICS OF ACETYLENE-ADDITION MECHANISM OF DIAMOND GROWTH [J].
HUANG, D ;
FRENKLACH, M ;
MARONCELLI, M .
JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (22) :6379-6381
[9]   ENERGETICS OF SURFACE-REACTIONS ON (100) DIAMOND PLANE [J].
HUANG, DY ;
FRENKLACH, M .
JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (04) :1868-1875
[10]  
Kee R.J., 1986, SAND868246 SAND NAT