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PHOTON-MEDIATED SEQUENTIAL RESONANT-TUNNELING IN INTENSE TERAHERTZ ELECTRIC-FIELDS

被引：157
作者：
GUIMARAES, PSS
KEAY, BJ
KAMINSKI, JP
ALLEN, SJ
HOPKINS, PF
GOSSARD, AC
FLOREZ, LT
HARBISON, JP
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
[2] BELLCORE,RED BANK,NJ 07701
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 24期
关键词：
D O I：
10.1103/PhysRevLett.70.3792
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have measured the current-voltage (I-V) characteristic of semiconductor superlattices in the presence of intense terahertz electric fields produced by free-electron lasers. The nonlinear I-V curves exhibit new structure that we attribute to photon-mediated sequential resonant tunneling. This tunneling process consists of well to well sequential tunneling into photon sidebands induced by the terahertz electric fields.
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页码：3792 / 3795
页数：4
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