MAGNETO-REFLECTANCE OF IS EXCITON GROUND-STATES IN INP AND GAAS

被引:45
作者
WILLMANN, F [1 ]
SUGA, S [1 ]
DREYBRODT, W [1 ]
CHO, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPER FORSCH, STUTTGART, WEST GERMANY
关键词
D O I
10.1016/0038-1098(74)90885-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:783 / 786
页数:4
相关论文
共 16 条
[1]  
Aggarwal R. L., 1972, SEMICONDUCTORS SEMIM, V9
[2]   CORRECTION [J].
ALTARELL.M .
PHYSICAL REVIEW B, 1973, 8 (08) :4046-4046
[3]   PERTURBATION-THEORY INVESTIGATION OF EXCITON GROUND-STATE OF CUBIC SEMICONDUCTORS IN A MAGNETIC-FIELD [J].
ALTARELLI, M ;
LIPARI, NO .
PHYSICAL REVIEW B, 1973, 7 (08) :3798-3802
[4]   GROUND AND FIRST EXCITED-STATES OF EXCITONS IN A MAGNETIC-FIELD [J].
CABIB, D ;
FIORIO, G ;
FABRI, E .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B, 1972, B 10 (01) :185-&
[5]  
CHO K, TO BE PUBLISHED
[6]   MAGNETO-OPTICAL INVESTIGATION OF FREE-EXCITON REFLECTANCE FROM HIGH-PURITY EPITAXIAL GAAS [J].
DINGLE, R .
PHYSICAL REVIEW B, 1973, 8 (10) :4627-4633
[7]  
DREYBRODT W, TO BE PUBLISHED
[8]  
FISCHBACH JU, 1973, THESIS U STUTTGART
[9]   VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1971, 4 (10) :3460-&
[10]  
LIPARI NO, TO BE PUBLISHED