INP-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH HIGH-QUALITY SHORT-PERIOD (INAS)(3M)/(GAAS)(1M) SUPERLATTICE CHANNEL LAYERS

被引：5

作者：

AUER, U

REUTER, R

HEEDT, C

PROST, W

TEGUDE, FJ

机构：

[1] Solid State Electronics Department, Sonderforschungsbereich SFB 254, Gerhard-Mercator-Universität GH Duisburg, Duisburg, D-47057

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80134-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InP-based heterostructure field-effect transistors (HFETs) incorporating an (InAs)(3m)/(GaAs)(1m) short-period superlattice (SPSL) subchannel are compared to HFETs using a ternary In0.77Ga0.23As alloy with respect to transport and device performance. Room temperature Hall mobility of 13100 cm(2)/V . s was measured on a (InAs)(3)/(GaAs)(1) SPSL with a two-dimensional electron sheet density of 3.1x10(12) cm(-2), which are the highest mobilities in such a material system so far. Sheet resistances as low as 35 Omega(square), at 17 K confirm the high quality of the (InAs)(3)/(GaAs)(1) SPSL channel material resulting in high transit and unilateral gain cut-off frequencies of 63 and 190 GHz, respectively, in HFETs exhibiting gate lengths of 0.65 mu m. Nevertheless, a significant improvement compared to the ternary alloy could not be verified.

引用

页码：1225 / 1229

页数：5

共 10 条

[1]

Tacano M., Sugiyama Y., Takeuchi Y., Appl. Phys. Lett., 58, (1991)

[2]

Chough K.B., Chang T.Y., Feuer M.D., Lalevic B., Electron. Lett., 28, (1992)

[3]

Brown A.S., Schmitz A.E., Nguyen L.D., Henige J.A., Larson L.E., Proc. 6th Int. Conf. on InP and Related Materials, (1994)

[4]

Nguyen L.D., Brown A.S., Thompson M.A., Jelloian L.M., IEEE Trans. Electron Devices, 39 ED, (1992)

[5]

Yao T., Jap. J. Appl. Phys., 22, (1983)

[6]

Toyoshima H., Anan T., Nishi K., Ichihashi T., Okamoto A., J. Appl. Phys., 68, (1990)

[7]

Nishiyama N., Yano H., Nakajima S., Hayashi H., Appl. Phys. Lett., 55, (1989)

[8]

Kunzel H., Bottcher J., Gibis R., Hoenow H., Low-temperature MBE of AlGaInAs lattice-matched to InP, Journal of Crystal Growth, 127, (1993)

[9]

Auer U., Reuter R., Heedt C., Kunzel H., Prost W., Tegude F.J., Proc. 6th Int. Conf. on InP and Related Materials, (1994)

[10]

Heedt C., Gottwald P., Buchaldi F., Prost W., Kunzel H., Tegude F.J., Proc. 4th Int. Conf. on InP and Related Materials, (1991)

← 1 →