LOW-CURRENT PROTON-BOMBARDED (GAAL)AS DOUBLE-HETEROSTRUCTURE LASERS

被引：10

作者：

BOULEY, JC

DELPECH, P

CHARIL, J

CHAMINANT, G

LANDREAU, J

NOBLANC, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 04期

关键词：

D O I：

10.1063/1.90358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：327 / 330

页数：4

共 17 条

[1] CURRENT THRESHOLDS IN STRIPE-CONTACT INJECTION LASERS [J].

DUMKE, WP .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1279-1281

[2] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

DYMENT, JC ;

NORTH, JC ;

MILLER, BI ;

RIPPER, JE ;

DASARO, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&

[3] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028

[4] GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :292-302

[5] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS [J].

HARTMAN, RL ;

SCHUMAKER, NE ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :756-759

[6]

KRESSEL H, 1976, J APPL PHYS, V47, P3583

[7] INFLUENCE OF STRIPE WIDTH ON THRESHOLD CURRENT OF DOUBLE-HETEROJUNCTION LASERS [J].

LADANY, I .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1935-1940

[8] SHORT CAVITY SEMICONDUCTOR-LASER [J].

MATSUMOTO, N ;

ANDO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) :1697-1698

[9]

NAMIZAKI H, 1976, T IECE JAPAN, V59, P8

[10] FIBER OPTICAL COMMUNICATIONS DEVICES [J].

NOBLANC, JP .

APPLIED PHYSICS, 1977, 13 (03) :211-223

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