A 1ST STUDY OF RADIATION-DAMAGE DUE TO OXYGEN IMPLANTATION IN CUINSE2 SINGLE-CRYSTALS

被引：10

作者：

CROWTHER, VP

IMANIEH, M

STEPHENS, GA

TOMLINSON, RD

机构：

[1] Department of Electronic and Electrical Engineering, University of Salford, Salford

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 67卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95846-J

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion beam channelling has been observed for the first time in [110] oriented CuInSe2 single crystals grown by the vertical Bridgman technique. CuInSe2 is particularly of interest since it is used as an absorber layer in thin-film solar cells, the efficiency of which is optimised by annealing in oxygen. For this reason a first study of oxygen implantation using single crystals and the RBS channelling technique has been made. The implant energy was 40 keV and the implant fluences ranged from 5 x 10(14) to 10(16) atoms cm-2. Data is presented showing a buildup in radiation damage with respect to increasing implant fluence. This shows a general increase in the dechannelling level over the range of the incident oxygen ions as well as an increase in the near surface damage. Preliminary results of the anneal behaviour of the damage are also reported.

引用

页码：428 / 431

页数：4

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