DISTRIBUTION OF THE DEEP ACCEPTOR FE IN SEMI-INSULATING INP IN BOTH ITS CHARGE STATES

被引：17

作者：

MEIER, W

ALT, HC

VETTER, T

VOLKL, J

WINNACKER, A

机构：

[1] Siemens Corp. Res., Erlangen

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 04期

关键词：

D O I：

10.1088/0268-1242/6/4/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The distribution of the compensating Fe acceptor in semi-insulating (Sl) InP wafers is measured-to our knowledge for the first time-in both its charge states, [Fe2+] and [Fe3+]. In the wafers studied the inhomogeneities of the material are due to the inhomogeneous distribution of the activated Fe, rather than to that of the residual shallow donors. According to the data, open questions exist with regard to the absolute values of the optical cross sections sigma-p and sigma-n of Fe in InP.

引用

页码：297 / 300

页数：4