HIGH-DOSE NITROGEN IMPLANTATION IN MONO-CRYSTALLINE SILICON - DOSES AND ANNEALING CONDITIONS FOR OBTAINING BURIED INSULATING HOMOGENEOUS LAYER

被引：3

作者：

BOURGUET, P

DUPART, JM

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 03期

关键词：

D O I：

10.1051/rphysap:01980001503064700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：647 / 652

页数：6

共 19 条

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