HIGH-DOSE NITROGEN IMPLANTATION IN MONO-CRYSTALLINE SILICON - DOSES AND ANNEALING CONDITIONS FOR OBTAINING BURIED INSULATING HOMOGENEOUS LAYER

被引：3

作者：

BOURGUET, P

DUPART, JM

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 03期

关键词：

D O I：

10.1051/rphysap:01980001503064700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：647 / 652

页数：6

共 19 条

[11]

FREEMAN JH, 1970, SEP EUR C ION IMPL G, P74

[12] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[13] NITROGEN-IMPLANTED SILICON .2. ELECTRICAL PROPERTIES [J].

MITCHELL, JB ;

SHEWCHUN, J ;

THOMPSON, DA ;

DAVIES, JA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :335-343

[14] NITROGEN-IMPLANTED SILICON .1. DAMAGE ANNEALING AND LATTICE LOCATION [J].

MITCHELL, JB ;

PRONKO, PP ;

SHEWCHUN, J ;

THOMPSON, DA ;

DAVIES, JA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :332-334

[15]

PAVLOV PV, 1967, SOV PHYS DOKL, V12, P11

[16] LATTICE DISORDER STUDIES IN LOW-TEMPERATURE NITROGEN-IMPLANTED SILICON [J].

PRONKO, PP ;

MITCHELL, JB ;

SHEWCHUN, J ;

DAVIES, JA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1973, 20 (04) :257-263

[17]

SCHWUTTKE GH, 1969, T METALL SOC AIME, V245, P475

[18]

SCHWUTTKE GH, 1968, RADIATION EFFECTS SE, P406

[19] FORMATION OF SIO2 FILMS BY OXYGEN-ION BOMBARDMENT [J].

WATANABE, M ;

TOOI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (08) :737-&

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