FORMATION OF POLYCRYSTALLINE ZIRCON (ZRSIO4) FROM AMORPHOUS SILICA AND AMORPHOUS ZIRCONIA

被引:48
作者
ITOH, T
机构
[1] Research Center, Dow Corning Japan Ltd., Ashigarakami-gun, Kanagawa, 258-01, 603 Kishi, Yamakita-machi
关键词
D O I
10.1016/0022-0248(92)90336-H
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Formation process of zircon (ZrSiO4) from an equimolar mixture of amorphous silica and amorphous zirconia has been studied mainly by means of a high-temperature X-ray diffraction technique. It is shown that zircon is formed at temperatures as low as 1200-degrees-C, predominantly from amorphous silica and tetragonal zirconia. Formation of zircon dominates over the transformation of amorphous silica to cristobalite. It is inferred from the crystallite-size analysis that tetragonal-zirconia crystallites are Converted to ZrSiO4 crystallites upon saturation of Si species in tetragonal-zirconia crystallites. Tetragonal --> monoclinic transformation of unreacted zirconia in the reaction mixture is shown to occur during the quenching process.
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页码:223 / 228
页数:6
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