ELECTRICAL AND OPTICAL CHARACTERIZATION OF SIC

被引：269

作者：

PENSL, G ^{[1
]}

CHOYKE, WJ ^{[1
]}

机构：

[1] UNIV PITTSBURGH, DEPT PHYS & ASTRON, PITTSBURGH, PA 15260 USA

来源：

PHYSICA B-CONDENSED MATTER | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90249-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We review the current use of electrical and optical methods to study the semiconducting properties of SiC. More specifically we treat Hall measurements, deep-level transient spectroscopy, infrared absorption and luminescence. Some very recent results, not yet available in the literature, on donor and acceptor levels in 3C-SiC, 4H-SiC and 6H-SiC are discussed.

引用

页码：264 / 283

页数：20

共 72 条

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