CHARACTERIZATION OF GAAS/ALGAAS HOT-ELECTRON TRANSISTORS USING MAGNETIC-FIELD EFFECTS ON LAUNCHED-ELECTRON TRANSPORT

被引：4

作者：

IMAMURA, K

MUTO, S

YOKOYAMA, N

SASA, M

OHNISHI, H

HIYAMIZU, S

NISHI, H

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(86)90457-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：481 / 486

页数：6

共 4 条

[1] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED
HEIBLUM, M
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 343 - 366
[2] ISHIKAWA T, 1985, 32ND SPRING M JAP SO
[3] ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS
MILLER, RC
KLEINMAN, DA
GOSSARD, AC
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7085 - 7087
[4] Yokoyama N., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P532