GROWTH OF DIAMOND THIN-FILMS BY DC PLASMA CHEMICAL VAPOR-DEPOSITION AND CHARACTERISTICS OF THE PLASMA

被引:79
作者
SUZUKI, K
SAWABE, A
INUZUKA, T
机构
[1] AOYAMA GAKUIN UNIV,SETAGAYA KU,TOKYO 157,JAPAN
[2] TOSHIBA CO LTD,CTR RES & DEV,SAIWAI KU,KAWASAKI 210,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 01期
关键词
Chemical vapor deposition; Diamond; Langmuir probe method; Plasma diagnostic; Thin film;
D O I
10.1143/JJAP.29.153
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diamond thin films have been formed by dc plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen (gas ratio (CH4/H2); 2/100, total gas pressure; 2.66×104Pa) with a growth rate of ∼20 µm/h. During the course of diamond growth, characteristics of the plasma were measured by the Langmuir single probe method and also by emission spectrometry. From the characterization of the plasma, it was found that the degree of ionization was rather low (∼10-7), and the statistical temperature of hydrogen gas was ∼5×103K. By a thermodynamic investigation at the gas temperature around 5×103K, it was revealed that the source gases (H2and CH4) of over 99% are decomposed to neutral atomic hydrogen and atomic carbon. © 1990 IOP Publishing Ltd.
引用
收藏
页码:153 / 157
页数:5
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